unisonic technologies co., ltd ut20n03 power mosfet www.unisonic.com.tw 1 of 5 copyright ? 2008 unisonic technologies co., ltd qw-r502-139.b n-channel enhancement mode ? features * r ds(on) = 20m ? @v gs = 10 v * low capacitance * optimized gate charge * fast switching capability * avalanche energy specified ? symbol 1.gate 3.source 2.drain *pb-free plating product number: ut20n03l ? ordering information ordering number pin assignment normal lead free plating package 1 2 3 packing UT20N03-TN3-R ut20n03l-tn3-r to-252 g d s tape reel ut20n03-tn3-t ut20n03l-tn3-t to-252 g d s tube
ut20n03 power mosfet unisonic technologies co., ltd 2 of 4 www.unisonic.com.tw qw-r502-139.b ? absolute maximum ratings (t j =25c, unless otherwise specified) parameter symbol ratings unit drain-source voltage v dss 30 v gate-source voltage v gss 20 v continuous drain current i d 20 pulsed drain current (note 1) i dm 120 a single pulsed (note 2) e as 15 avalanche energy repetitive (note 1) e ar 6 mj peak diode recovery (note 3) dv/dt 6 kv/s power dissipation p d 60 w junction temperature t j +175
storage temperature t stg -55 ~ +175
note: absolute maximum ratings are those values beyond which the device could be permanently damaged. absolute maximum ratings are stre ss ratings only and functional dev ice operation is not implied. ? thermal data parameter symbol min typ max unit junction-to-ambient ja 100
/w junction-to-case jc 1.7 2.5
/w ? electrical characteristics (t j =25c, unless otherwise specified) parameter symbol test conditions min typ max unit off characteristics drain-source breakdown voltage bv dss v gs =0 v, i d =250 a 30 v drain-source leakage current i dss v ds =30v,v gs =0v 1 a gate-source leakage current i gss v ds =0 v, v gs = 20v 100 na on characteristics gate-threshold voltage v gs(th) v ds =v gs , i d =25 a 1.2 1.6 2 v v gs =4.5v, i d =15a 22.9 31 drain-source on-state resistance r ds(on) v gs =10v, i d =15a 15.5 20 m ? dynamic characteristics input capacitance c iss 530 700 output capacitance c oss 200 275 reverse transfer capacitance c rss v ds =25 v, v gs =0v, f=1mhz 60 90 pf switching characteristics turn-on delay time t d(on) 6.2 9.3 turn-on rise time t r 11 17 turn-off delay time t d(off) 23 24 turn-off fall-time t f v gs =10v,v dd =15v, r g =12.7 ? , i d =15a 18 27 ns gate-source charge q gs 2.5 3.1 gate-drain charge q gd v dd =15v,i d =15a 6.4 9.6 gate charge total q g v dd =15v,i d =15a, v gs =0~5v 8.4 11 nc source- drain diode ratings and characteristics drain-source diode forward voltage v sd v gs =0v,i f =30a 1.1 1.4 v maximum continuous drain-source diode forward current i s 30 maximum pulsed drain-source diode forward current i sm 120 a reverse recovery time t rr 15 18 ns reverse recovery charge q rr v r =15v,i f =i s , di f /dt=100a/s 2 3 nc notes: 1. repetitive rating : pulse widt h limited by maximum junction temperature 2. i d = 15a, v dd = 25v, r g = 25 ? , starting t j = 25c 3. i s =30a, v ds =24v, di/dt=200a/ 0 s, t j(max) =175 4. pulse test: pulse width 300s, duty cycle 2% 5. essentially independent of operating temperature
ut20n03 power mosfet unisonic technologies co., ltd 3 of 4 www.unisonic.com.tw qw-r502-139.b ? typical characteristics r ds(on) =v ds /i d continuous drain current, i d (a) z thjc (k/w) r ds(on) (m $ ) continuous drain current, i d (a) gate charge 16 14 12 10 6 8 4 2 0 24 0 6 8 1012 14 16182021 gate charge, q g (nc) v gs =f(q gate ) i d =15a pulse 0.2 v ds max 0.5 v ds max 0.8 v ds max i d =f(v gs ) v ds ? 2i d r ds(on)max t p =80 0 s 60 55 50 45 40 35 30 25 20 10 15 5 0 01 2 3 4 55.5 gate-source voltage, v gs (v) transfer characteristics
ut20n03 power mosfet unisonic technologies co., ltd 4 of 4 www.unisonic.com.tw qw-r502-139.b ? typical characteristics(cont.) c (pf) i f (a) utc assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all utc products described or contained herein. utc products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.
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